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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">dan</journal-id><journal-title-group><journal-title xml:lang="ru">Доклады Национальной академии наук Беларуси</journal-title><trans-title-group xml:lang="en"><trans-title>Doklady of the National Academy of Sciences of Belarus</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">1561-8323</issn><issn pub-type="epub">2524-2431</issn><publisher><publisher-name>The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.29235/1561-8323-2022-66-1-26-34</article-id><article-id custom-type="elpub" pub-id-type="custom">dan-1034</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICS</subject></subj-group></article-categories><title-group><article-title>Электрические свойства черного мышьяка</article-title><trans-title-group xml:lang="en"><trans-title>Electric properties of black arsenic</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Федотова</surname><given-names>Ю. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Fedotova</surname><given-names>J. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Федотова Юлия Александровна – доктор физико-математических наук, заместитель директора.</p><p>Ул. Бобруйская, 11, 220006, Минск</p></bio><bio xml:lang="en"><p>Fedotova Julia A. – D. Sc. (Physics and Mathematics), Deputy director.</p><p>11, Bobruiskaya Str., 220006, Minsk</p></bio><email xlink:type="simple">Julia@hep.by</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Научно-исследовательский Институт ядерных проблем, Белорусский государственный университет</institution></aff><aff xml:lang="en"><institution>Research Institute for Nuclear Problems, Belarusian State University</institution></aff></aff-alternatives><pub-date pub-type="collection"><year>2022</year></pub-date><pub-date pub-type="epub"><day>09</day><month>03</month><year>2022</year></pub-date><volume>66</volume><issue>1</issue><fpage>26</fpage><lpage>34</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Федотова Ю.А., 2022</copyright-statement><copyright-year>2022</copyright-year><copyright-holder xml:lang="ru">Федотова Ю.А.</copyright-holder><copyright-holder xml:lang="en">Fedotova J.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://doklady.belnauka.by/jour/article/view/1034">https://doklady.belnauka.by/jour/article/view/1034</self-uri><abstract><p>Исследована структура, а также зависимости электрического сопротивления R(T) от температуры поликристалла природного черного мышьяка (b-As). Образцы b-As содержали как фазу черного мышьяка и следы его окисла, так и фазу серого мышьяка и арсенолита (As2O3). Поведение относительного магнетосопротивления MR(B) кристалла b-As при постоянной температуре описывалось соотношением MR(B) = bBn+ cBm, где коэффициенты b и с, а также показатели степени n и m определялись механизмами формирования магнетосопротивления и зависели от температуры. При температурах ниже 10 К зависимость MR(B) показывает наличие конкуренции отрицательного (при b &lt; 0 и n ≈ 0,5) и положительного (при с &gt; 0 и m ≈ 1) вкладов. При температуре T &gt; 10 К наблюдался только ПМР эффект, для которого в диапазоне 10 &lt; T &lt; 100 К величины b &gt; 0, n ≈ 1 и с → 0. При Т &gt; 100 К величины b, с &gt; 0, n ≈ 1 и 1,30 ≤ m ≤ 1,47. Наблюдаемое поведение зависимостей MR(B) в широком диапазоне температур обусловлено сильной неоднородностью и неупорядоченностью структуры исследуемого кристалла черного мышьяка.</p></abstract><trans-abstract xml:lang="en"><p>R(T, B) of the natural black arsenic (b-As) polycrystal was studied. It was shown that the polycrystalline b-As sample contains the b-As phase and also the traces of its oxide, as well as grey arsenic and arsenolite (As2O3). The behavior of the relative magnetoresistance of the b-As crystal was described by the relation MR(B) = bBn + cBm, where the coefficients b and c and the exponents n and m were also affected by the mechanisms of magnetoresistance formation and temperature. At the temperatures below 10 K, MR(B) shows the presence of a competition between negative (with b &lt; 0 and n ≈ 0.5) and positive (with c &gt; 0 and m ≈ 1) contributions. Above 10 K, only the PMR effect was presented. For the PMR effect, at 10 &lt; T &lt; 100 K it is observed that the values of b &gt; 0, n ≈ 1 and c → 0. Above 100 K, it is observed that the values of b, c &gt; 0 and n ≈ 1 and 1.30 &lt; m &lt; 1.47. The observed behavior of the R(T, B) dependences is associated with strong inhomogeneity and/or disorder of the investigated black arsenic crystal.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>черный мышьяк</kwd><kwd>электротранспорт</kwd><kwd>магнетосопротивление</kwd></kwd-group><kwd-group xml:lang="en"><kwd>black arsenic</kwd><kwd>carrier transport</kwd><kwd>magnetoresistance</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа поддержана Белорусским республиканским фондом фундаментальных исследований (договор № Ф20ПТИ-014). Автор выражает благодарность профессору Я. Чену, Пекинский технологический институт (Китай), за предоставление для исследований кристалла b-As</funding-statement><funding-statement xml:lang="en">The work is supported by the Belarusian Republican Foundation for Fundamental Research (grant no. Ф20ПТИ-014). Author is also grateful to Prof. Y. Chen from Beijing Institute of Technology (China) for the supplying of b-As crystals for research</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Thickness-Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic / M. Z. Zhong [et al.] // Adv. Funct. Mater. – 2018. – Vol. 28, N 43. – Art. 1802581. https://doi.org/10.1002/adfm.201802581</mixed-citation><mixed-citation xml:lang="en">Zhong M. Z., Xia Q. L., Pan L. F., Liu Y. Q., Chen Y. B., Deng H. X., Li J. B., Wei Z. M. 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