danДоклады Национальной академии наук БеларусиDoklady of the National Academy of Sciences of Belarus1561-83232524-2431The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"10.29235/1561-8323-202468-2-112-117dan-1181Research ArticleФИЗИКАPHYSICSГипердопирование кремния с помощью имплантации ионов селена и марганца и импульсного лазерного отжигаSilicon hyperdoping using selenium and manganese ion implantation and pulsed laser annealingВанТинWangTing

Аспирант

пр. Независимости, 4, 220030, Минск

 

Postgraduate Student

4, Nezavisimosti Ave., 220030, Minsk

tingwang@bsu.byКомаровФ. Ф.KomarovF. F.

Комаров Фадей Фадеевич – академик, д-р физ.-мат. наук, профессор

ул. Курчатова, 7, 220045, Минск

Komarov Fadei F. – Academician, D. Sc. (Physics and Mathematics), Professor

7, Kurchatov Str., 220045, Minsk

komarovf@bsu.byПархоменкоИ. Н.ParkhomenkoI. N.

Пархоменко Ирина Николаевна – канд. физ.-мат. наук, вед. науч. сотрудник

ул. Курчатова, 5, 220045, Минск

Parkhomenko Irina N. – Ph. D. (Physics and Mathematics), Leading Researcher

5, Kurchatov Str., 220108, Minsk

parkhomenko@bsu.byЯнГофэнYangGuofeng

Д-р наук, профессор

214122, Уси, проспект Лиху, 1800

D. Sc., Professor

1800, Lihu Avenue, 214122, Wuxi

gfyang@jiangnan.edu.cnСюэЦзюньцзюньXueJunjun

Канд. наук, доцент

улица Вэньюань, 9, 210023, Нанкин

Ph. D., Associate Professor

9, Wenyuan Road, 210023, Nanjing

jjxue@njupt.edu.cnБелорусский государственный университетBelarusian State UniversityИнститут прикладных физических проблем им. А. Н. Севченко Белорусского государственного университетаA. N. Sevchenko Institute of Applied Physical Problems of Belarusian State UniversityШкола науки, Цзяннаньский университетSchool of Science, Jiangnan UniversityШкола электронной и оптической инженерии и Школа гибкой электроники (Технологии будущего), Нанкинский университет почты и телекоммуникацийCollege of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications202429042024682112117Copyright © Ван Т., Комаров Ф.Ф., Пархоменко И.Н., Ян Г., Сюэ Ц., 20242024Ван Т., Комаров Ф.Ф., Пархоменко И.Н., Ян Г., Сюэ Ц.Wang T., Komarov F.F., Parkhomenko I.N., Yang G., Xue J.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.belnauka.by/jour/article/view/1181

Изучено влияние импульсного лазерного отжига (ИЛО) на структуру и оптические свойства имплантированных ионами Mn-, Seи (Mn+Se)-слоев кремния. Ионы Mn+ с энергией 95 кэВ и Se+ с энергией 200 кэВ отдельно и совместно были имплантированы в пластины Si p-типа равными флюенсами 1 · 1016 см–2 при комнатной температуре. Затем образцы облучались импульсами рубинового лазера с плотностью энергии 2 Дж/см2. Детальное перераспределение атомов Mn и Se в имплантированных слоях при ИЛО исследовалось с помощью случайных и каналированных спектров резерфордовского обратного рассеяния. Было обнаружено, что значительный процент имплантированного марганца диффундирует к поверхности кремния, а концентрационный профиль Se по глубине уширяется как к поверхности, так и в глубь образца в течение ИЛО. Совместная имплантация Mn усиливает диффузию Se к поверхности, уменьшает активацию Se в кристаллическом кремнии, но улучшает кристаллическую структуру имплантированного слоя кремния. В отличие от образцов, имплантированных только Mn, Se-имплантированные и (Mn+Se)-коимплантированные образцы после ИЛО демонстрируют сильное оптическое поглощение в инфракрасном диапазоне. Наблюдаемая полоса поглощения при 0,6 эВ связана с электронными переходами между сформированной подзоной и нижними энергетическими уровнями зоны проводимости.

The effect of pulsed laser annealing (PLA) on the structure and optical properties of Mn-, Seand (Mn+Se)implanted silicon layers was studied. 95 keV Mn+ and 200 keV Se+ ions were implanted separately and together into p-type Si wafers up to the fluence 1 · 1016 cm–2 at room temperature. Then, the samples were irradiated in the ambient air with a single 2 J/cm2 ruby laser pulse. The detailed redistribution of Mn and Se atoms in the implanted layers during PLA was examined using Rutherford backscattering spectroscopy in random and channeling configuration. It was found that a notable percentage of implanted manganese atoms diffuses to the silicon surface, while the Se concentration depth profile broadens in both directions after PLA. Mn co-implantation enhances the Se diffusion to the surface, which leads to a Se decrease in crystalline silicon, but it does improve the crystal structure of the implanted silicon layer due to the increase of diffusion velocity. In contrast to the Mn-implanted sample, Se-implanted and (Mn+Se)-co-implanted samples after PLA exhibit strong optical absorption in the infrared range. The observed band at 0.6 eV is associated with electronic transitions from the intermediate band to the lowest energy levels of the conduction band.

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The authors declare that there are no conflicts of interest present.