danДоклады Национальной академии наук БеларусиDoklady of the National Academy of Sciences of Belarus1561-83232524-2431The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"dan-330Research ArticleФИЗИКАPHYSICSЭЛЕКТРОННАЯ СТРУКТУРА И ОПТИЧЕСКИЕ СВОЙСТВА ДВУМЕРНЫХ КРИСТАЛЛОВ SnSELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF TWO-DIMENSIONAL CRYSTALS OF SnSШАПОШНИКОВВ. Л.SHAPOSHNIKOVV. L.victor.shaposhnikov@gmail.comКРИВОШЕЕВАА. В.KRIVOSHEEVAA. V.anna@nano.bsuir.edu.byБОРИСЕНКОВ. Е.BORISENKOV. E.borisenko@bsuir.byБелорусский государственный университет информатики и радиоэлектроникиBelarusian State University of Informatics and Radioelectronics2016281020166045055Copyright © ШАПОШНИКОВ В.Л., КРИВОШЕЕВА А.В., БОРИСЕНКО В.Е., 20162016ШАПОШНИКОВ В.Л., КРИВОШЕЕВА А.В., БОРИСЕНКО В.Е.SHAPOSHNIKOV V.L., KRIVOSHEEVA A.V., BORISENKO V.E.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.belnauka.by/jour/article/view/330

Теоретическим моделированием определена электронная структура и оптические свойства двумерных кристаллов сульфида олова (SnS). Рассмотрены низкотемпературная α-SnS и высокотемпературная β-SnS фазы. Обнаружено, что все структуры являются полупроводниками и при увеличении толщины кристаллов характеризуются уменьшением ширины запрещенной зоны до значений, типичных для объемного материала. Рассчитанные значения коэффициентов отражения меньше значений в объемных материалах, а коэффициент поглощения света сопоставим с характеристиками объемного SnS и GaAs.

The electronic band spectra and the optical properties of 2D crystals of tin sulfide (SnS) were investigated by means of ab initio simulation. Low-temperature (α-SnS) and high-temperature (β- SnS) phases in the form of 2D crystals were considered. All compounds were found to be semiconductors. Their band gaps decrease upon increasing the number of monolayers approaching the values of bulk materials. Calculated reflection coefficients of the structures studied are lower than in bulk materials, and the light absorption coefficient has the same order of magnitude as in bulk SnS and GaAs.

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The authors declare that there are no conflicts of interest present.