danДоклады Национальной академии наук БеларусиDoklady of the National Academy of Sciences of Belarus1561-83232524-2431The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"10.29235/1561-8323-2018-62-5-540-545dan-550Research ArticleФИЗИКАPHYSICSВлияние положения уровня Ферми на отжиг дефекта межузельный атом углерода в кремнииEffect of the Fermi level position on the annealing characteristic of interstitial carbon defect in siliconКоршуновФ. П.KorshunovF. P.

Коршунов Федор Павлович – член-корреспондент, доктор технических наук, профессор, главный научный сотрудник.

Ул. П. Бровки, 19, 220072, Минск

Korshunov Fedor Pavlovich – Corresponding Member, D. Sc. (Engineering), Professor, Chief researcher.

19, P. Brovka Str., 220072, Minsk

korshun@ifttp.bas-net.byЛастовскийС. Б.LastovskiiS. В.

Ластовский Станислав Брониславович – кандидат физико-математических наук, заведующий лабораторией.

Ул. П. Бровки, 19, 220072, Минск

Lastovskii Stanislav Bronislavovich – Ph. D. (Physics and Mathematics), Head of the laboratory.

19, P. Brov ka Str., 220072, Minsk

lastov@ifttp.basnet.byЯкушевичА. С.YakushevichH. S.

Якушевич Анна Сергеевна – младший научный сотрудник.

Ул. П. Бровки, 19, 220072, Минск

Yakushevich Hanna Sergeevna – Junior researcher.

19, P. Brovka Str., 220072, Minsk

yakushevich@ifttp.bas-net.byМаркевичВ. П.MarkevichV. P.

Маркевич Владимир Павлович – кандидат физико-математических наук, научный сотрудник.

Ул. Sackville, Манчестер M139Pl

Markevich Vladimir Pavlovich – Ph. D. (Physics and Mathematics), Researcher.

Sackville Str., Manchester M139Pl

V.Markevich@manchester.ac.ukМуринЛ. И.MurinL. I.

Мурин Леонид Иванович – кандидат физико-математических наук, ведущий научный сотрудник.

Ул. П. Бровки, 19, 220072, Минск

Murin Leonid Ivanovich – Ph. D. (Physics and Mathematics), leading Researcher.

19, P. Brovka Str., 220072, Minsk

murin@ifttp.bas-net.byНаучно-практический центр Национальной академии наук Беларуси по материаловедениюScientific-Practical Materials Research Centre of the National Academy of Sciences of BelarusУниверситет г. МанчестерManchester University201829102018625540545Copyright © Коршунов Ф.П., Ластовский С.Б., Якушевич А.С., Маркевич В.П., Мурин Л.И., 20182018Коршунов Ф.П., Ластовский С.Б., Якушевич А.С., Маркевич В.П., Мурин Л.И.Korshunov F.P., Lastovskii S.В., Yakushevich H.S., Markevich V.P., Murin L.I.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.belnauka.by/jour/article/view/550

Методом DlTS изучено влияние зарядового состояния межузельного углерода (Сi ) на кинетику его отжига в облученных быстрыми электронами и α-частицами п+–р-структурах, изготовленных на кристаллах кремния, легированных бором (NB = 5 · 1013 и 2,5 · 1015 см–3). Отжиги проводились как с приложением обратного смещения, так и без смещения. Показано, что в положительном зарядовом состоянии дефекта энергия активации отжига составляет ΔE = 0,88 эВ, а в нейтральном зарядовом состоянии ΔE = 0,73 эВ. Отличаются и значения частотных факторов, даже при одной и той же концентрации стоков для Сi.

We present experimental results showing that the migration ability of interstitial carbon atom (Сi) in silicon depends noticeably on its charge state. The experimental results were obtained from the analysis of deep level transient spectra in n+–p diodes subjected to irradiation with 4–6 MeV electrons or α-particles at T < 273 k and subsequent heat-treatments in the temperature range 280–330 k under reverse bias and without it. It has been found that in the positive charge state the Сi migration energy is 0.88 ± 0.02 eV, while in the neutral charge state it is lowered down to 0.73–0.74 eV.

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The authors declare that there are no conflicts of interest present.