danДоклады Национальной академии наук БеларусиDoklady of the National Academy of Sciences of Belarus1561-83232524-2431The Republican Unitary Enterprise Publishing House "Belaruskaya Navuka"10.29235/1561-8323-2021-65-1-40-45dan-943Research ArticleФИЗИКАPHYSICSВлияние деформаций решетки на электронную структуру монослоя дисульфида молибденаInfluence of lattice deformations on the electronic structure of the molybdenum disulfide monolayerКривошееваА. В.KrivosheevaA. V.

Кривошеева Анна Владимировна – д-р физ.-мат. наук, вед. науч. сотрудник.

ул. П. Бровки, 6, 220013, Минск

Krivosheeva Anna V. – D. Sc. (Physics and Mathematics), Leading researcher

6, P. Brovka Str., 220013, Minsk

krivosheeva@bsuir.byШапошниковВ. Л.ShaposhnikovV. L.

Шапошников Виктор Львович – канд. физ.-мат. наук, вед. науч. сотрудник

ул. П. Бровки, 6, 220013, Минск

 

Shaposhnikov Victor L. – Ph. D. (Physics and Mathematics), Leading researcher

6, P. Brovka Str., 220013, Minsk

shaposhnikov@bsuir.byБорисенкоВ. Е.BorisenkoV. E.

Борисенко Виктор Евгеньевич – д-р физ.-мат. наук, профессор, заведующий кафедрой

ул. П. Бровки, 6, 220013, Минск

 

Borisenko Victor E. – D. Sc. (Physics and Mathematics), Professor, Head of the Department

6, P. Brovka Str., 220013, Minsk

borisenko@bsuir.byБелорусский государственный университет информатики и радиоэлектроникиBelarusian State University of Informatics and RadioelectronicsБелорусский государственный университет информатики и радиоэлектроники; Национальный исследовательский ядерный университет «МИФИ»Belarusian State University of Informatics and Radioelectronics2021230220216514045Copyright © Кривошеева А.В., Шапошников В.Л., Борисенко В.Е., 20212021Кривошеева А.В., Шапошников В.Л., Борисенко В.Е.Krivosheeva A.V., Shaposhnikov V.L., Borisenko V.E.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://doklady.belnauka.by/jour/article/view/943

Методами теоретического моделирования определены возможности и условия модификации ширины запрещенной зоны и характера межзонных переходов при воздействии сжимающих и растягивающих напряжений на кристаллическую решетку дисульфида молибдена мономолекулярной толщины. Показано, что в зависимости от направления и величины возникающей деформации решетки материал может быть как прямозонным, так и непрямозонным полупроводником, и определены условия таких трансформаций. Результаты свидетельствуют о потенциальной возможности применения монослоев дисульфида молибдена в наноэлектронных приборах нового поколения с управляемым направлением движения носителей заряда.

The possibilities and conditions for modifying the band gap and the behavior of interband transitions under compressive and tensile strains in the crystal lattice of a molybdenum disulfide monolayer have been determined by theoretical modeling. It is shown that depending on the value and direction of the strains the compound may be a direct-gap or indirect-gap semiconductor, and the conditions for such transformations are determined. The results demonstrate a potential use of the molybdenum disulfide monolayer in nanoelectronic devices of new generation in which controlled transport of charge carriers is possible

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The authors declare that there are no conflicts of interest present.