Resistive switching mechanisms in memristor structures based on nonstoichiometric silicon nitride layers | Romanov | Doklady of the National Academy of Sciences of Belarus

Doklady of the National Academy of Sciences of Belarus
Doklady Nacionalʹnoj akademii nauk Belarusi

бел | рус | eng

ISSN 1561-8323 (Print)
ISSN 2524-2431 (Online)

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ISSN 1561-8323 (Print)
ISSN 2524-2431 (Online)

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About the Authors

I. A. Romanov
Belarusian State University
Belarus

Romanov Ivan A. – Head of the Laboratory

5, Kurchatov Str., 220108, Minsk

N. S. Kovalchuk
Joint Stock Company “Integral”
Belarus

Kovalchuk Natalia S. – Ph. D. (Engineering), Deputy General Director – Chief Engineer

121A, Kazinets Str., 220108

L. A. Vlasukova
Belarusian State University
Belarus

Vlasukova Liudmila A. – Ph. D. (Physics and Mathe matics), Head of the Laboratory

5, Kurchatov Str., 220108, Minsk

I. N. Parkhomenko
Belarusian State University
Belarus

Parkhomenko Irina N. – Ph. D. (Physics and Mathe matics), Leading Researcher

5, Kurchatov Str., 220108, Minsk

F. F. Komarov
A. N. Sevchenko Institute of Applied Physical Problems
Belarus

Komarov Fadei F. – Academician, D. Sc. (Physics and Mathematics), Head of the Laboratory

7, Kurchatov Str., 220108, Minsk

S. A. Demidovich
Joint Stock Company “Integral”
Belarus

Demidovich Sergey A. – Leading Engineer

121A, Kazinets Str., 220108

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