Resistive switching mechanisms in memristor structures based on nonstoichiometric silicon nitride layers
https://doi.org/10.29235/1561-8323-2025-69-1-23-31
Abstract
The electrophysical properties and the resistive switching effect of the Ni/SiNx/p+Si/Ni memristor structure are investigated. Silicon nitride films with a thickness of ~40–60 nm were deposited in inductively coupled plasma from a SiH4– N2–Ar mixture at [SiH4]/[N2] ratios of 2.19 and 2.55, which ensured the formation of SiNx with an excess of Si compared to stoichiometry. To investigate the effect of thermal annealing on the resistive properties of SiNx, one of the wafers with a nitride film was annealed using rapid thermal annealing (RTA, 1200 °C, 3 minutes in Ar). The resistive switching effect was observed when applying a voltage from −4 to +10 V for test structures based on nitride films with refractive indices of 2.34 and 2.5. It is shown that the conductivity and charge transport mechanism in SiNx films with resistive properties depend on the deposition conditions and subsequent heat treatment. Possible mechanisms of resistive switching are discussed.
About the Authors
I. A. Romanov
Belarusian State University
Belarus
Belarus
Romanov Ivan A. – Head of the Laboratory
5, Kurchatov Str., 220108, Minsk
N. S. Kovalchuk
Joint Stock Company “Integral”
Belarus
Belarus
Kovalchuk Natalia S. – Ph. D. (Engineering), Deputy General Director – Chief Engineer
121A, Kazinets Str., 220108
L. A. Vlasukova
Belarusian State University
Belarus
Belarus
Vlasukova Liudmila A. – Ph. D. (Physics and Mathe matics), Head of the Laboratory
5, Kurchatov Str., 220108, Minsk
I. N. Parkhomenko
Belarusian State University
Belarus
Belarus
Parkhomenko Irina N. – Ph. D. (Physics and Mathe matics), Leading Researcher
5, Kurchatov Str., 220108, Minsk
F. F. Komarov
A. N. Sevchenko Institute of Applied Physical Problems
Belarus
Belarus
Komarov Fadei F. – Academician, D. Sc. (Physics and Mathematics), Head of the Laboratory
7, Kurchatov Str., 220108, Minsk
S. A. Demidovich
Joint Stock Company “Integral”
Belarus
Belarus
Demidovich Sergey A. – Leading Engineer
121A, Kazinets Str., 220108
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