Memristor structure with the effect of switching resistance based on silicon nitride thin layers

The electrophysical properties and the resistive switching effect of the ITO/SiN_x/Si memristor structure were studied. A silicon nitride film with a thickness of ~200 nm with an inhomogeneous element depth distribution was deposited by low-pressure chemical vapor deposition. Based on the Rutherford backscattering data, it was shown that the concentration of excess silicon atoms in the SiN_x film increases from 9 to 44 % when approaching the Si substrate. The analysis of the current-voltage characteristics of ITO/SiN_x/Si structures revealed that the conduction mechanism in the high-resistance state is determined by the nitride film properties and is described by the Poole-Frenkel model taking into account the hopping model of electron transport between traps. Switching to the low-resistance state is probably caused by the migration of indium or tin ions from the ITO contact to the SiN_x layer. The conduction of the ITO/SiN_x/Si structure in the low-resistance state is determined by both the mechanisms of charge-carrier injection from the contact and charge-carrier transport through the dielectric layer. Reverse polarity results in destructing the conductive channel and switching the structure to the high-resistance state. The photo-switching effect was found for the ITO/SiN_x/Si structure, which opens up new possibilities of using memristors in silicon optoelectronic systems.

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