Influence of lattice deformations on the electronic structure of the molybdenum disulfide monolayer
https://doi.org/10.29235/1561-8323-2021-65-1-40-45
Abstract
The possibilities and conditions for modifying the band gap and the behavior of interband transitions under compressive and tensile strains in the crystal lattice of a molybdenum disulfide monolayer have been determined by theoretical modeling. It is shown that depending on the value and direction of the strains the compound may be a direct-gap or indirect-gap semiconductor, and the conditions for such transformations are determined. The results demonstrate a potential use of the molybdenum disulfide monolayer in nanoelectronic devices of new generation in which controlled transport of charge carriers is possible
About the Authors
A. V. Krivosheeva
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Krivosheeva Anna V. – D. Sc. (Physics and Mathematics), Leading researcher
6, P. Brovka Str., 220013, Minsk
V. L. Shaposhnikov
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Shaposhnikov Victor L. – Ph. D. (Physics and Mathematics), Leading researcher
6, P. Brovka Str., 220013, Minsk
V. E. Borisenko
Belarusian State University of Informatics and Radioelectronics
Belarus
Belarus
Borisenko Victor E. – D. Sc. (Physics and Mathematics), Professor, Head of the Department
6, P. Brovka Str., 220013, Minsk
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