Surface-barrier structures based on solid solutions (In 2 S 3 ) х •(AgIn 5 S 8 ) 1–х
https://doi.org/10.29235/1561-8323-2021-65-6-764-768
Abstract
Single crystals of solid solutions (In2S3)x⋅ (AgIn5S8)1–x were grown by the method of directional crystallization of the melt (Bridgman method). Studies of the elemental composition and crystal structure of these single crystals have been carried out. On the basis of solid solutions (In2S3)x⋅ (AgIn5S8)1–x, photosensitive structures have been created for the first time and the photoelectric properties of these structures have been determined. The possibility of using the created structures as broadband photoconverters of optical radiation is shown.
About the Authors
A. A. FeshchankaBelarus
Feshchanka Artsiom A. – Postgraduate student
6, P. Brovka Str., 220013, Minsk, Republic of Belarus
V. V. Khoroshko
Belarus
Khoroshko Vitaly V. – Ph. D. (Engineering), Head of the Department
6, P. Brovka Str., 220013, Minsk, Republic of Belarus
References
1. Bodnar I. V., Feschenko A. A., Khoroshko V. V. Band gap of (In2S3)x(AgIn5S8)1–x single-crystal alloys. Semiconductors, 2020, vol. 54, no. 12, pp. 1611–1615. https://doi.org/10.1134/s1063782620120039
2. Polubok V. A., Kovalchuk A. M. Growth and study of the properties of In2S3 crystals. Liopo V. A. [i dr.], redkol. Fizika kondensirovannogo sostoyaniya: tezisy dokladov XIII Respublikanskoi nauchnoi konferentsii aspirantov, magistrantov i studentov, Grodno, 26–28 aprelya 2005 [Liopo V. A. [et al.], eds. Physics of Condensed Matter: Abstracts of the XIII Republican scientifical conference graduate students, undergraduates and students, Grodno, April 26–28, 2005]. Grodno, 2005, pp. 183–186 (in Russian).
3. Bodnar I. V., Tkhan C. B. Crystal structure and band gap of (MnIn2S4)1–x• (AgIn5S8)x alloys. Semiconductors, 2018, vol. 52, no. 8, pp. 1086–1090. https://doi.org/10.1134/s1063782618080043
4. Sherban K. F. Obtaining and research of optical and photoelectric properties of solid solutions in the systems CdS–In2S3 and AgInS2–In2S3. Kishinev, 1974. 145 p. (in Russian).
5. Stubbs M. F., Schufle J. A., Thompson A. J., Duncan J. M. The In–In2S3 System. Journal of the American Chemical Society, 1952, vol. 74, no. 6, pp. 1441–1443. https://doi.org/10.1021/ja01126a024
6. Zavrazhnov A. Yu., Naumov A. V., Anorov P. V., Goncharov E. G., Sidei V. I., Pervov V. S. T-x phase diagram of the In–S system. Inorganic Materials, 2006, vol. 42, no. 12, pp. 1294–1298. https://doi.org/10.1134/s0020168506120028
7. Ansell H. G., Boorman R. S. Phase relationships in the In–S system. Journal of the Electrochemical Society, 1971, vol. 118, no. 1, pp. 133–136. https://doi.org/10.1149/1.2407925
8. Ivashchenko I. A., Danyliuk I. V., Olekseyuk I. D., Pankevych V. Z., Halyan V. V. Phase equilibria in the quasiternary system Ag2S–Ga2S3–In2S3 a nd o ptical p roperties of (Ga55In45)2S300, (Ga54.59In44.66Er0.75)2S300 single crystals. Journal of Solid State Chemistry, 2015, vol. 227, pp. 255–264. https://doi.org/10.1016/j.jssc.2015.04.006
9. Kozera V. R., Fedorchuk A., Olekseyuk I. D., Parasyuk O. V. Phase equilibria in the quasi-ternary system Ag2S–In2S3–CdS at 870 K. Journal of Alloys and Compounds, 2009, vol. 480, no. 2, pp. 360–364. https://doi.org/10.1016/j.jallcom.2009.02.052
10. Palatnik L. S., Rogacheva E. I. Equilibrium diagrams and structure of semiconductor alloys A2ICVI-B2IIIC3VI. Doklady Akademii nauk SSSR [Reports of the USSR Academy of Sciences], 1967, vol. 174, no. 1, pp. 80–83 (in Russian).