BISTABLE DEEP LEVEL CENTERS IN IRRADIATED p-TYPE SILICON CRYSTALS
Abstract
Deep level transient spectroscopy (DLTS) has been used for studying the electrically active defects in p-type silicon crystals irradiated with fast electrons and α-particles. A new bistable radiation-induced center with deep levels around the midgap of silicon is revealed. The main characteristics of this center are determined and some suggestions on its origin are given.
About the Authors
S. B. LASTOVSKII
Scientific and Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk
Belarus
Belarus
V. P. MARKEVICH
University of Manchester, Manchester
United Kingdom
United Kingdom
F. P. KORSHUNOV
Scientific and Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk
Belarus
Belarus
H. S. YAKUSHEVICH
Scientific and Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk
Belarus
Belarus
L. I. MURIN
Scientific and Practical Materials Research Centre of National Academy of Sciences of Belarus, Minsk
Belarus
Belarus
L. F. MAKARENKO
Belarusian State University, Minsk
Belarus
Belarus
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