BISTABLE DEEP LEVEL CENTERS IN IRRADIATED p-TYPE SILICON CRYSTALS
Abstract
Deep level transient spectroscopy (DLTS) has been used for studying the electrically active defects in p-type silicon crystals irradiated with fast electrons and α-particles. A new bistable radiation-induced center with deep levels around the midgap of silicon is revealed. The main characteristics of this center are determined and some suggestions on its origin are given.
About the Authors
S. B. LASTOVSKIIBelarus
V. P. MARKEVICH
United Kingdom
F. P. KORSHUNOV
Belarus
H. S. YAKUSHEVICH
Belarus
L. I. MURIN
Belarus
L. F. MAKARENKO
Belarus
References
1. Chantre, A. Introduction to defect bistability / A. Chantre // Appl. Phys. A. – 1989. – Vol. 48. – P. 3–9.
2. Watkins, G. D. Defect metastability and bistability / G. D. Watkins // Material Science Forum. – 1989. – Vol. 38–41. – P. 39–50.
3. Мукашев, Б. Н. Метастабильные и бистабильные дефекты в кремнии / Б. Н. Мукашев, Х. А. Абдуллин, Ю. В. Горелкинский // УФН. – 2000. – Т. 43, № 2. – С. 143–155.
4. Makarenko, L. F. Trapping of minority carriers in thermal U−-donors in n-Si / L. F. Makarenko, L. I. Murin // Phys. stat. sol. (b). – 1988. – Vol. B145, N 1. – P. 241–253.
5. Watkins, G. D. Modification of defect structures by electronic excitation / G. D. Watkins // Reviews of Solid State Science. – 1990. – Vol. 4, N 3–4. – P. 279–296.
6. Коршунов, Ф. П. Радиационная технология изготовления мощных полупроводниковых приборов / Ф. П. Коршунов, Ю. В. Богатырев // Весці НАН Беларусі. Сер. фіз.-тэхн. навук. – 2008. – № 4. – С. 106–114.
7. Structure and electronic properties of trivacancy and trivacancy-oxygen complexes in silicon / V. P. Markevich [et al.] // Phys. stat. sol. (a). – 2011. – Vol. 208, N 3. – P. 568–571.
8. The trivacancy and trivacancy-oxygen family of defects in silicon / V. P. Markevich [et al.] // Solid State Phenomena. – 2014. – Vol. 205–206. – P. 181–190.
9. Dobaczewski, L. Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors / L. Dobaczewski, A. R. Peaker, B. K. Nielsen // J. Appl. Phys. – 2004. – Vol. 96, N 9. – P. 4689–4728.
10. Forward current enhanced elimination of the radiation induced boron-oxygen complex in n+–p diodes / L. F. Makarenko [et al.] // Phys. stat. sol. (a). – 2014. – Vol. 211, N 11. – P. 2558–2562.
11. Complexes of the self-interstitial with oxygen in irradiated silicon: a new assignment of the 936 cm−1 band / J. Hermansson [et al.] // Physica B: Condensed Matter. – 2001. – Vol. 302–303. – P. 188–192.
12. Radiation damage in silicon exposed to high-energy protons / G. Davies [et al.] // Phys. Rev. B. – 2006. – Vol. 73, N 16. – P. 165202 (1–10).
13. Self-interstitial clusters in silicon / R. Jones [et al.] // Nucl. Instrum. Methods Phys. Res. B. – 2002. – Vol. 186. – P. 10–18.
14. Posselt, M. Atomistic study of the migration of di- and tri-interstitials in silicon / M. Posselt, F. Gao, D. Zwicker // Phys Rev. B. – 2005. – Vol. 71, N 24. – P. 245202 (1–12).
15. Evolution of radiation-induced carbon-oxygen-related defects in silicon upon annealing: LVM studies / L. I. Murin [et al.] // Nucl. Instrum. Methods Phys. Res. B. – 2006. – Vol. 253. – P. 210–213.