LOCAL VIBRATIONAL MODES OF THE COMPLEX CONSISTING OF DIVACANCY AND TWO OXYGEN ATOMS IN SILICON
Abstract
The processes of formation and annealing of vacancy–oxygen-related Vn Om complexes in Czochralski-grown silicon crystals irradiated with fast electrons have been investigated by means of low-temperature IR Fourier spectroscopy. A number of arguments are presented confirming the identification of the vibrational absorption band at 829.3 cm–1 as arising from the V2 O2 defect.
About the Authors
E. A. Tolkacheva
Scientific and Practical Materials Research Centre of the National Academy of Sciences of Belarus
Belarus
Belarus
L. I. Murin
Scientific and Practical Materials Research Centre of the National Academy of Sciences of Belarus
Belarus
Belarus
F. P. Korshunov
Scientific and Practical Materials Research Centre of the National Academy of Sciences of Belarus
Belarus
Belarus
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