SEMICONDUCTOR DIODE WITH HOPPING MIGRATION OF ELECTRONS VIA POINT DEFECTS OF CRYSTALLINE MATRIX
Abstract
For the first time, a semiconductor p+n+-diode is considered, which is completely compensated with the point irradiationinduced defects (rt-defects) of one kind in three charge states (−1, 0, +1 in elementary charge units) on the background of the crystalline matrix. Each rt-defect introduces two energy levels into the semiconductor band gap. Such a diode, in which electrons in the conduction band and holes in the valence band are absent, is called a ζ-diode. The charge transport in the ζ-diode is performed by electron hopping via rt-defects only. In the drift-diffusion approximation, a system of nonlinear differential equations, which describes the hopping migration of electrons via rt-defects, is solved numerically. The distribution of the electric potential and the charge states along the ζ-diode, as well as its static current-voltage characteristics are calculated for a temperature of 78 K. The possibility of hopping current rectification in the ζ-diode based on crystalline silicon, partially disordered by the point irradiation-induced defects, is shown.
About the Authors
N. A. Poklonski
Belarusian State University
Belarus
D. Sc. (Physics and Mathematics), Professor
Belarus
D. Sc. (Physics and Mathematics), Professor
A. I. Kovalev
Belarusian State University
Belarus
Postgraduate student
Belarus
Postgraduate student
S. A. Vyrko
Belarusian State University
Belarus
Ph. D. (Physics and Mathematics), Senior researcher
Belarus
Ph. D. (Physics and Mathematics), Senior researcher
A. T. Vlassov
Belarusian State University
Belarus
Ph. D. (Physics and Mathematics), Assistant Professor, Leading researcher
Belarus
Ph. D. (Physics and Mathematics), Assistant Professor, Leading researcher
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