LOW-FREQUENCY ELECTRICAL CAPACITANCE OF SEMICONDUCTOR DIODE WITH HOPPING CONDUCTIVITY VIA TRIPLE-CHARGED DEFECTS
Abstract
For the first time the capacitance of a semiconductor p+n+-diode is theoretically calculated, in which both the p+-region and the n+-region are completely compensated with point irradiation-induced defects (rt-defects) of one kind. Each rt-defect introduces two energy levels into a band gap of crystalline host matrix and can be one of three charge states (−1, 0, +1). Such a diode, in which both electrons in the conduction band and holes in the valence band are absent, is called a ζ-diode. The ζ-diode current is performed by electron hopping via rt-defects only. In the drift-diffusion approximation, a system of stationary nonlinear differential equations for hopping migration of electrons via rt-defects is numerically solved. The static capacitance-voltage characteristics of the ζ-diode based on crystalline silicon are calculated for the operating temperature ranging from 78 to 373 K. It is shown that the ζ-diode can be used as radiation-resistant varicaps operating at low (cryogenic) temperatures.
About the Authors
N. A. Poklonski
Belarusian State University
Belarus
Belarus
D. Sc. (Physics and Mathematics), Professor
A. I. Kovalev
Belarusian State University
Belarus
Belarus
Postgraduate student
S. A. Vyrko
Belarusian State University
Belarus
Belarus
Ph. D. (Physics and Mathematics), Senior researcher
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