LOW-FREQUENCY ELECTRICAL CAPACITANCE OF SEMICONDUCTOR DIODE WITH HOPPING CONDUCTIVITY VIA TRIPLE-CHARGED DEFECTS
Abstract
For the first time the capacitance of a semiconductor p+n+-diode is theoretically calculated, in which both the p+-region and the n+-region are completely compensated with point irradiation-induced defects (rt-defects) of one kind. Each rt-defect introduces two energy levels into a band gap of crystalline host matrix and can be one of three charge states (−1, 0, +1). Such a diode, in which both electrons in the conduction band and holes in the valence band are absent, is called a ζ-diode. The ζ-diode current is performed by electron hopping via rt-defects only. In the drift-diffusion approximation, a system of stationary nonlinear differential equations for hopping migration of electrons via rt-defects is numerically solved. The static capacitance-voltage characteristics of the ζ-diode based on crystalline silicon are calculated for the operating temperature ranging from 78 to 373 K. It is shown that the ζ-diode can be used as radiation-resistant varicaps operating at low (cryogenic) temperatures.
About the Authors
N. A. Poklonski
Belarusian State University
Belarus
Belarus
D. Sc. (Physics and Mathematics), Professor
A. I. Kovalev
Belarusian State University
Belarus
Belarus
Postgraduate student
S. A. Vyrko
Belarusian State University
Belarus
Belarus
Ph. D. (Physics and Mathematics), Senior researcher
References
1. Poklonski N. A. Ionization equilibrium and hopping conductivity in doped semiconductors. Belarusian State University Publ., 2004. 195 p. (in Russian).
2. Pollak M. Hopping – past, present and future(?). Physica Status Solidi (B), 2002, vol. 230, no. 1, pp. 295–304. doi. org/10.1002/1521-3951(200203)230:13.0.CO;2-C
3. Oyama K., Ri S.-G., Kato H., Takeuchi D., Makino T., Ogura M., Tokuda N., Okushi H., Yamasaki S. Carrier transport of diamond p+-i-n+ junction diode fabricated using low-resistance hopping p+ and n+ layers. Physica Status Solidi A, 2011, vol. 208, no. 4, pp. 937–942. doi.org/10.1002/pssa.201026490
4. Poklonski N. A., Vyrko S. A., Poklonskaya O. N., Kovalev A. I., Zabrodskii A. G. Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond. Journal of Applied Physics, 2016, vol. 119, no. 24, pp. 245701. doi.org/10.1063/1.4954281
5. Bulyarskii S. V., Svetukhin V. V., L’vov P. E. Thermodynamics of complex formation and defect clustering in semiconductors. Semiconductors, 2000, vol. 34, no. 4, pp. 371–375. doi.org/10.1134/1.1187990
6. Zangenberg N., Goubet J.-J., Larsen A. N. On-line DLTS investigations of the mono- and di-vacancy in p-type silicon after low temperature electron irradiation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, vol. 186, no. 1–4, pp. 71–77. doi.org/10.1016/S0168-583X(01)00876-X
7. Iniewski K., (ed.). Radiation effects in semiconductors. CRC Press, 2011. 420 p.
8. Brudnyi V. N. Charge neutrality in semiconductors: defects, interfaces, surface. Russian Physics Journal, 2013, vol. 56, no. 7, pp. 754–756. doi.org/10.1007/s11182-013-0095-4
9. Liou J. J., Lindholm F. A. Capacitance of semiconductor p-n junction space-charge layers: an overview. Proceedings of the IEEE, 1988, vol. 76, no. 11, pp. 1406–1422. doi.org/10.1109/5.90112
10. Sarjeant W. J., Clelland I. W., Price R. A. Capacitive components for power electronics. Proceedings of the IEEE, 2001, vol. 89, no. 6, pp. 846–855. doi.org/10.1109/5.931475
11. Johnston A. H. Radiation damage of electronic and optoelectronic devices in space. Proceedings of 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Application, Tsukuba, Japan, October 11–13, 2000, pp. 1–9. Available at: hdl.handle.net/2014/16123.
12. Poklonski N. A., Vyrko S. A., Zabrodskii A. G. Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level. Semiconductors, 2007, vol. 41, no. 11, pp. 1300–1306. doi. org/10.1134/S1063782607110048
13. Poklonski N. A, Kovalev A. I., Vyrko S. A., Vlassov A. T. Semiconductor diode with hopping migration of electrons via point defects of crystalline matrix. Doklady Natsional’noi akademii nauk Belarusi = Doklady of the National Academy of Sciences of Belarus, 2017, vol. 61, no. 3, pp. 30–37 (in Russian).
14. Poklonski N. A., Vyrko S. A., Kovalev A. I. Distribution of electrostatic potential and charge states of immobile defects at hopping migration of electrons between them in semiconductor film. Amorfnye i mikrokristallicheskie poluprovodniki: sbornik trudov IX Mezhdunarodnoi konferencii [Proceedings IX International Conference Amorphous and Microcrystalline Semiconductors]. Saint-Petersburg, 2014, pp. 93–94 (in Russian).
15. Poklonski N. A., Kovalev A. I., Vyrko S. A., Vlassov A. T. Integral capacitance of semiconductor diode with triple-charged irradiation-induced point defects. Aktual’nye problemy fiziki tverdogo tela (FTT-2016): sbornik dokladov Mezhdunarodnoi nauchnoi konferencii [Proceedings International Conference Actual Problems of Solid State Physics (SSP-2016)]. Minsk, 2016, vol. 2, pp. 135–138 (in Russian).
16. Poklonski N. A., Kovalev A. I., Vyrko S. A., Vlassov A. T. Differential capacitance of semiconductor diode with hopping conduction via irradiation-induced defects. Materialy i struktury sovremennoj elektroniki: sbornik nauchnykh trudov VII Mezhdunarodnoi nauchnoi konferencii [Proceedings VII International Conference Materials and Structures of Modern Electronics]. Minsk, 2016, pp. 178–181 (in Russian).
Review
Views: 654
Email this article 