ION-BEAM SYNTHESIS OF ZnSe AND ZnS NANOCLUSTERS IN SiO2 LAYERS

We have studied the formation of ZnSe and ZnS precipitates in silicon dioxide by ion implantation at 550 °C and subsequent annealing at 900 °C for 30 min in the Ar atmosphere. Two sets of samples have been prepared: the first set of samples has been implanted with Se and Zn ions and the second set of samples – with Se, Zn and S ions. The analysis of XTEM images shows that the “hot” implantation leads to the formation of extended layers containing nanoclusters (with size of 20 nm). Subsequent annealing results in a significant structural transformation of layers with nanoclusters. For annealed samples, large crystallites (up to 90 nm) are observed at the depth of maximum impurity concentration, while small clusters are registered in the subsurface layer of silicon dioxide. Raman spectroscopy proves the formation of ZnSe and ZnSe + ZnS crystal phases for deposited and annealed samples of the first and second sets. 

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