CONTROLLED ION-BEAM TRANSFORMATION OF SILICON BIPOLAR MICROWAVE POWER TRANSISTOR’S CHARACTERISTICS

Abstract

The key condition for radical progress in technology in the 21th century is the availability of a technique for the controlled production in a solid of 3D patterns incorporating regions of desired physical and chemical properties. It is especially urgent for the creation of nanometer areas. In this article, a method for changing the silicon bipolar microwave power transistor’s characteristics in a direct and deliberate manner by modifying the chemical composition at the molybdenum–silicon boundary, the electrophysical properties of molybdenum–silicon contacts, and the electrophysical characteristics of transistor structure areas by the phosphorus ions irradiation of generated оhmic molybdenum–silicon contacts to the transistor emitters is proposed for the first time. The possibilities of this method are investigated and confirmed experimentally.